Title :
Recent Developments in Microwave Semiconductor Devices for Satellite Communications and Direct Broadcasting
Author :
Hirayama, Hiromitsu
Author_Institution :
Kansai Electronics Research Laboratory, NEC Corporation, 9-1, Seiran 2-chome, Otsu, Shiga 520, Japan
Abstract :
Activities on microwave and millimeter-wave compound semiconductor devices in Japan are reported. Low noise performances for 2DEGFETs have been remarkably improved with sub-1/4¿m gate and AlGaAs/InGaAs structures. Applications for millimeter-wave low noise and power amplifiers are described. Self-aligned GaAs MES FETs with sub-1/2¿m gate, are well refined for Ka band MMICs. Recent activities on MMICs and GaAs power MESFETs are reviewed.
Keywords :
FETs; Gallium arsenide; Indium gallium arsenide; Low-noise amplifiers; MMICs; Microwave devices; Satellite broadcasting; Satellite communication; Semiconductor device noise; Semiconductor devices;
Conference_Titel :
Microwave Conference, 1991. 21st European
Conference_Location :
Stuttgart, Germany
DOI :
10.1109/EUMA.1991.336463
