Title :
A Universal Large-Signal Equivalent Circuit Model for the GaAs MESFET
Author :
Brazil, Thomas J.
Author_Institution :
Department of Electronic & Electrical Engineering, University College, Dublin, Dublin 4, Ireland.
Abstract :
A large-signal equivalent circuit model is developed for a GaAs MESFET which is intended to be "universal", i.e. valid for DC, small-signal and nonlinear operation over a very wide range of bias conditions. Novel features of the proposed approach include accurate sub-threshold modelling, and allowance for dispersion in both transconductance and drain-source conductance. A sequential procedure is outlined, based on a range of experimental measurements, for characterising a given device in terms of the model parameters.
Keywords :
Current measurement; Equivalent circuits; FETs; Fitting; Gallium arsenide; MESFET circuits; Microwave devices; Radio frequency; Transconductance; Voltage;
Conference_Titel :
Microwave Conference, 1991. 21st European
Conference_Location :
Stuttgart, Germany
DOI :
10.1109/EUMA.1991.336464
