• DocumentCode
    2084711
  • Title

    A Universal Large-Signal Equivalent Circuit Model for the GaAs MESFET

  • Author

    Brazil, Thomas J.

  • Author_Institution
    Department of Electronic & Electrical Engineering, University College, Dublin, Dublin 4, Ireland.
  • Volume
    2
  • fYear
    1991
  • fDate
    9-12 Sept. 1991
  • Firstpage
    921
  • Lastpage
    926
  • Abstract
    A large-signal equivalent circuit model is developed for a GaAs MESFET which is intended to be "universal", i.e. valid for DC, small-signal and nonlinear operation over a very wide range of bias conditions. Novel features of the proposed approach include accurate sub-threshold modelling, and allowance for dispersion in both transconductance and drain-source conductance. A sequential procedure is outlined, based on a range of experimental measurements, for characterising a given device in terms of the model parameters.
  • Keywords
    Current measurement; Equivalent circuits; FETs; Fitting; Gallium arsenide; MESFET circuits; Microwave devices; Radio frequency; Transconductance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1991. 21st European
  • Conference_Location
    Stuttgart, Germany
  • Type

    conf

  • DOI
    10.1109/EUMA.1991.336464
  • Filename
    4136404
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2084711