DocumentCode
2084764
Title
Characterization of Microwave Power FETs Based on Physical Models
Author
Snowden, Christopher M. ; Pantoja, Renato R.
Author_Institution
Microwave Solid State Group, Department of Electronic and Electrical Engineering, University of Leeds, Leeds, LS2 9JT, UK
Volume
2
fYear
1991
fDate
9-12 Sept. 1991
Firstpage
933
Lastpage
938
Abstract
A physical model is used to accurately quantify the dependence of microwave performance and breakdown voltage of power FETs on device geometry and doping profile. The characterisation of double-recessed power FETs using physical models is presented for the first time in this paper. The influence of trapping phenomena in semi-insulating substrates and surface states is accounted for. Simulated results show very good correlation with measured data.
Keywords
Circuit simulation; Doping profiles; Equivalent circuits; Fabrication; Geometry; Microwave FETs; Microwave devices; Predictive models; Semiconductor process modeling; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1991. 21st European
Conference_Location
Stuttgart, Germany
Type
conf
DOI
10.1109/EUMA.1991.336466
Filename
4136406
Link To Document