• DocumentCode
    2084795
  • Title

    Microwave FET Parameter Sensitivity Analysis Based on an Accurate Physical Model

  • Author

    Atherton, John S. ; Snowden, Christopher M. ; Richardson, John RI

  • Author_Institution
    Microwave Solid State Group, Department of Electronic and Electrical Engineering, The University of Leeds, Leeds LS2 9JT, UK.
  • Volume
    2
  • fYear
    1991
  • fDate
    9-12 Sept. 1991
  • Firstpage
    939
  • Lastpage
    944
  • Abstract
    The sensitivity of FET parameters to variations in geometry and manufacturing tolerances is predicted and qualified using an accurate physical model. The simulated results are compared to a specialily designed wafer of MESFETs containiing a range of devices, with differing geometrical parameters, chosen to give a wide range of both DC and small-singal performance.
  • Keywords
    Computational modeling; Geometry; MESFETs; Microwave FETs; Predictive models; Pulp manufacturing; Semiconductor device modeling; Sensitivity analysis; Solid modeling; Virtual manufacturing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1991. 21st European
  • Conference_Location
    Stuttgart, Germany
  • Type

    conf

  • DOI
    10.1109/EUMA.1991.336467
  • Filename
    4136407
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2084795