Title :
Microwave FET Parameter Sensitivity Analysis Based on an Accurate Physical Model
Author :
Atherton, John S. ; Snowden, Christopher M. ; Richardson, John RI
Author_Institution :
Microwave Solid State Group, Department of Electronic and Electrical Engineering, The University of Leeds, Leeds LS2 9JT, UK.
Abstract :
The sensitivity of FET parameters to variations in geometry and manufacturing tolerances is predicted and qualified using an accurate physical model. The simulated results are compared to a specialily designed wafer of MESFETs containiing a range of devices, with differing geometrical parameters, chosen to give a wide range of both DC and small-singal performance.
Keywords :
Computational modeling; Geometry; MESFETs; Microwave FETs; Predictive models; Pulp manufacturing; Semiconductor device modeling; Sensitivity analysis; Solid modeling; Virtual manufacturing;
Conference_Titel :
Microwave Conference, 1991. 21st European
Conference_Location :
Stuttgart, Germany
DOI :
10.1109/EUMA.1991.336467
