• DocumentCode
    2084971
  • Title

    Observation of FWM signal in strain-induced GaAs quantum dots

  • Author

    Ikezawa, M. ; Masumoto, Y. ; Hong-Wen Ren

  • Author_Institution
    Inst. of Phys., Tsukuba Univ.
  • fYear
    2004
  • fDate
    21-21 May 2004
  • Firstpage
    488
  • Lastpage
    489
  • Abstract
    FWM signal in strain-induced GaAs quantum dots was detected by using heterodyne method. The signal shows two-component decay and a clear oscillatory structure. Its period is different from the beat period in GaAs quantum well
  • Keywords
    III-V semiconductors; gallium arsenide; heterodyne detection; multiwave mixing; semiconductor quantum dots; FWM signal; GaAs quantum well; heterodyne method; oscillatory structure; strain-induced GaAs quantum dots; two-component decay; Four-wave mixing; Gallium arsenide; Luminescence; Nonlinear optics; Optical mixing; Optical modulation; Quantum dot lasers; Quantum dots; Quantum well lasers; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics Conference, 2004. (IQEC). International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-55752-778-4
  • Type

    conf

  • Filename
    1366857
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2084971