FD-TLM modeling of picosecond electromagnetic signal propagation in high-frequency MOSFET circuits

Author

Voelker, R.H. ; Eggers, K.B. ; Sentelle, C.G.

Author_Institution

Dept. of Electr. Eng., Nebraska Univ., Lincoln, NE, USA

Volume

2

fYear

1995

fDate

18-23 June 1995

Firstpage

840

Abstract

A MOSFET model with more realistic micron-size physical dimensions is incorporated in the FD-TLM method, expanding the application of this full-wave electromagnetic field calculation method to new systems. Good agreement is obtained between finite difference-transmission line matrix (FD-TLM) and SPICE3 simulations of a CMOS inverter, validating the MOSFET implementation in the FD-TLM method. Structural dimensions are intentionally made small compared to the wavelength of signals so that SPICE3, a quasi-static-based circuit analysis program, can be used for validation.

Keywords

CMOS digital integrated circuits; MOSFET; SPICE; circuit analysis computing; electromagnetic wave propagation; finite difference methods; invertors; semiconductor device models; transmission line matrix methods; CMOS inverter; FD-TLM method; FD-TLM modeling; MOSFET model; SPICE3 simulations; circuit analysis program; finite difference-transmission line matrix; full-wave electromagnetic field calculation; high-frequency MOSFET circuits; micron-size physical dimensions; picosecond electromagnetic signal propagation; structural dimensions; wavelength; Capacitance; Circuit simulation; Conductivity; Electrodes; Electromagnetic modeling; Electromagnetic propagation; MOSFET circuits; Pulse inverters; Semiconductor device modeling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation Society International Symposium, 1995. AP-S. Digest

Conference_Location

Newport Beach, CA, USA

Print_ISBN

0-7803-2719-5

Type

conf

DOI

10.1109/APS.1995.530148

Filename

530148