DocumentCode :
2085158
Title :
Ultrafast carrier dynamics in AlSb
Author :
Avanesyan, S.M. ; Hlaing Oo, W.M. ; Morrissey, F.X. ; McCluskey, M.D. ; Dexheimer, S.L.
Author_Institution :
Dept. of Phys., Washington State Univ., Pullman, WA
fYear :
2004
fDate :
21-21 May 2004
Firstpage :
501
Lastpage :
502
Abstract :
We present studies of the ultrafast carrier response in aluminum antimonide (AlSb) using femtosecond optical techniques. We find a multiphasic carrier response, together with a long-lived absorbance associated with photoionized DX centers in Se-doped material
Keywords :
III-V semiconductors; aluminium compounds; high-speed optical techniques; photoionisation; selenium; AlSb; Se-doped material; absorbance; aluminum antimonide; femtosecond optical techniques; multiphasic carrier response; photoionized DX centers; ultrafast carrier dynamics; Absorption; Acoustic signal detection; Frequency; Metastasis; Optical bistability; Optical materials; Phonons; Pulse measurements; Ultrafast optics; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics Conference, 2004. (IQEC). International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-778-4
Type :
conf
Filename :
1366863
Link To Document :
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