• DocumentCode
    2085158
  • Title

    Ultrafast carrier dynamics in AlSb

  • Author

    Avanesyan, S.M. ; Hlaing Oo, W.M. ; Morrissey, F.X. ; McCluskey, M.D. ; Dexheimer, S.L.

  • Author_Institution
    Dept. of Phys., Washington State Univ., Pullman, WA
  • fYear
    2004
  • fDate
    21-21 May 2004
  • Firstpage
    501
  • Lastpage
    502
  • Abstract
    We present studies of the ultrafast carrier response in aluminum antimonide (AlSb) using femtosecond optical techniques. We find a multiphasic carrier response, together with a long-lived absorbance associated with photoionized DX centers in Se-doped material
  • Keywords
    III-V semiconductors; aluminium compounds; high-speed optical techniques; photoionisation; selenium; AlSb; Se-doped material; absorbance; aluminum antimonide; femtosecond optical techniques; multiphasic carrier response; photoionized DX centers; ultrafast carrier dynamics; Absorption; Acoustic signal detection; Frequency; Metastasis; Optical bistability; Optical materials; Phonons; Pulse measurements; Ultrafast optics; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics Conference, 2004. (IQEC). International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-55752-778-4
  • Type

    conf

  • Filename
    1366863
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2085158