Title :
Ultrafast intersubband relaxation in GaN/AlN multiple quantum wells
Author :
Hamazaki, J. ; Kunugita, H. ; Ema, K. ; Matsui, S. ; Ishii, Y. ; Morita, T. ; Kikuchi, A. ; Kishino, K.
Author_Institution :
Dept. of Phys., Sophia Univ., Tokyo
Abstract :
We have observed intersubband transition dynamics in GaN/AlN. The relaxation dynamics consists of ultrafast and slower components. The origin of these dynamics is discussed
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high-speed optical techniques; relaxation; semiconductor quantum wells; GaN-AlN; GaN-AlN multiple quantum wells; intersubband transition dynamics; ultrafast intersubband relaxation; Absorption; Electrons; Gallium nitride; Laser excitation; Optical pulses; Optical pumping; Optical scattering; Pulse amplifiers; Temperature measurement; Ultrafast optics;
Conference_Titel :
Quantum Electronics Conference, 2004. (IQEC). International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-778-4
