Title :
Fabrication and emission characteristic of InGaN/GaN multiple quantum wells nanorods
Author :
Hsueh, T.H. ; Chang, Y.S. ; Lai, E. ; Huang, H.W. ; Ou-yang, M.C. ; Chang, C.W. ; Kuo, H.C. ; Wang, S.C. ; Sheu, J.K.
Author_Institution :
Inst. of Electro-Optical Eng., Nat. Chiao Tung Univ., Hsinchu
Abstract :
InGaN/GaN multiple quantum wells (MQWs) nanorods with 100 nm in diameter were fabricated by inductively coupled plasma (ICP) etching. The nanorods show large blue-shift in peak photoluminescence emission wavelength compared to that of the bulk emission
Keywords :
III-V semiconductors; gallium compounds; indium compounds; nanotechnology; photoluminescence; semiconductor quantum wells; spectral line shift; sputter etching; 100 nm; ICP etching; InGaN-GaN; InGaN-GaN multiple quantum wells nanorods; blue-shift; inductively coupled plasma etching; photoluminescence emission wavelength;
Conference_Titel :
Quantum Electronics Conference, 2004. (IQEC). International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-778-4
