Title :
Intensity dependent bleaching relaxation in PbS quantum dots
Author :
Savitski, V.G. ; Malyarevich, A.M. ; Yumashev, K.V. ; Raaben, E. ; Zhilin, A.A.
Author_Institution :
Int. Laser Center, Minsk
Abstract :
Time of carriers relaxation to surface traps in PbS-quantum-dots is decreased from 800 to 50 ps and from 120 ps to 50 ps with increasing pump power from 0.25 to 5.6 GW/cm and size from 5.5 to 6.3 nm, respectively
Keywords :
IV-VI semiconductors; carrier relaxation time; lead compounds; optical pumping; optical saturable absorption; semiconductor quantum dots; 120 ps; 5.5 nm; 50 ps; 6.3 nm; 800 ps; PbS; PbS quantum dots; bleaching relaxation; carriers relaxation time; pump power; surface traps;
Conference_Titel :
Quantum Electronics Conference, 2004. (IQEC). International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-778-4
