Title :
On the improvement of the recovery characteristics of semiconductor diodes by electron irradiation
Author :
Iliescu, Elena ; Niculescu, Anastase ; Banu, Viorel ; Nichita, Anca ; Sturzu, Nicoleta
Author_Institution :
Electron Accel. Lab., Inst. for Atomic Phys., Bucharest, Romania
Abstract :
The paper relates to the manufacture of fast semiconductor devices and, more particularly, to irradiation of semiconductor diodes to improve their electrical characteristics thereof The electron linear accelerator AL1N-10 was used to irradiate at room and high temperature silicon diodes type BA and BAX. The influence of 10 MeV electron irradiation upon the main electrical characteristics (reverse recovery time, forward voltage) has been examined for different dosages of 10 to 50 kGy
Keywords :
electron beam effects; elemental semiconductors; semiconductor diodes; silicon; 10 MeV; 10 MeV electron irradiation; Si; electron irradiation; electron linear accelerator AL1N-10; forward voltage; recovery characteristics; reverse recovery time; semiconductor diodes; Electric variables; Electrons; Linear accelerators; Pulp manufacturing; Semiconductor device manufacture; Semiconductor devices; Semiconductor diodes; Silicon; Temperature; Voltage;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651029
