Title :
Coupling between InAs quantum dots and strained InGaAs/GaAs coupled quantum-wells: a novel type of quantum dots
Author :
Mu, Xiaodong ; Ding, Yujie J. ; Wang, Zhiming ; Salamo, Gregory J. ; Little, John
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
Abstract :
We have studied coupling between InGaAs/GaAs coupled quantum wells and self-assembled InAs quantum dots by measuring the linewidths, peak energies and peak intensities of photoluminescence peaks for different pump powers and lateral locations
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical pumping; photoluminescence; self-assembly; semiconductor quantum dots; semiconductor quantum wells; spectral line breadth; InAs; InGaAs-GaAs; linewidths; peak energies; peak intensities; photoluminescence; pump powers; self-assembled InAs quantum dots; strained InGaAs-GaAs coupled quantum-wells;
Conference_Titel :
Quantum Electronics Conference, 2004. (IQEC). International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-778-4
