Title :
Exciton dephasing in quantum dot molecules
Author :
Borri, P. ; Langbein, W. ; Woggon, U. ; Schwab, M. ; Bayer, M. ; Fafard, S. ; Wasilewski, Z. ; Hawrylak, P.
Author_Institution :
Dortmund Univ.
Abstract :
The exciton dephasing time from 5 K to 60 K is measured in InAs/GaAs quantum-dot molecules using a highly sensitive four-wave mixing technique and shows a systematic dependence from the interdot barrier thicknesses
Keywords :
III-V semiconductors; excitons; gallium arsenide; indium compounds; multiwave mixing; semiconductor quantum dots; 5 to 60 K; InAs-GaAs; exciton dephasing; four-wave mixing technique; interdot barrier thicknesses; quantum dot molecules;
Conference_Titel :
Quantum Electronics Conference, 2004. (IQEC). International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-778-4
