DocumentCode
2086471
Title
Numerical simulation of cool MOS transistor
Author
Langer, Malgorzata ; Lisik, Zbigniew ; Podgorski, Jacek
Author_Institution
Inst. of Electron., Tech. Univ. of Lodz, Poland
fYear
2001
fDate
12-17 Feb. 2001
Firstpage
303
Lastpage
304
Abstract
Although the new CoolMOS concept for high-voltage MOSFET is based on the conventional MOSFET principle, it is not a gradual enhancement or further optimization of the conventional power MOSFET, but a ground-breaking innovation in the MOS-controlled power transistor technology field. Due to its low on-resistance accompanying the high blocking voltage, the previously known technology limits for the standard MOSFET have been far exceeded. This opens the way to new fields of application.
Keywords
numerical analysis; power MOSFET; semiconductor device models; simulation; 2D simulations; CoolMOS concept; HV MOSFET; MOS-controlled power transistor; cool MOS transistor; high blocking voltage; high-voltage MOSFET; low on-resistance; numerical modelling; numerical simulation; power MOSFET; Doping; Electric resistance; Equations; MOSFET circuits; Numerical models; Numerical simulation; Power MOSFET; Power transistors; Technological innovation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
CAD Systems in Microelectronics, 2001. CADSM 2001. Proceedings of the 6th International Conference. The Experience of Designing and Application of
Conference_Location
Lviv-Slavsko, Ukraine
Print_ISBN
966-553-079-8
Type
conf
DOI
10.1109/CADSM.2001.975849
Filename
975849
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