Title :
Silver-indium phase diagram and its applications to electronic packaging
Author :
Yuan-Yun Wu ; Lin, W.P. ; Lee, C.C.
Author_Institution :
Electr. Eng. & Comput. Sci., Mater. & Manuf. Technol., Univ. of California, Irvine, Irvine, CA, USA
fDate :
Feb. 27 2013-March 1 2013
Abstract :
In this paper, we will review the silver-indium (Ag-In) phase diagram and explores its unique features that enable the development of new bonding processes for electronic packaging. Its melting range covers 156°C to 952°C, from In melting point to Ag melting point. It consists of three intermetallic compounds (IMC), AgIn2, and Ag2In, and Ag3In, and a solid solution (Ag). Our experimental results do not show the Ag3In compound. In a Ag-rich joint design, only Ag2In and (Ag) show up. By further annealing at 250°C for 350 hours or 400°C for 5 hours, Ag2In converts to (Ag) by reacting with Ag. With the proper structure to begin with, a joint can be made at 180°C that contains only Ag2In and (Ag), achieving a melting temperature of 600°C. Annealing to convert Ag2In to (Ag) will increase the melting to higher than 800°C. Accordingly, various processes can be designed and developed for different packaging applications ranging from automotive electronics, high temperature electronics, and oil exploration.
Keywords :
annealing; bonding processes; electronics packaging; indium alloys; silver alloys; Ag-In; IMC; annealing; automotive electronics; bonding processes; electronic packaging; high temperature electronics; intermetallic compounds; melting point; oil exploration; silver-indium phase diagram; solid solution; temperature 156 degC to 952 degC; time 350 hour; Abstracts; Compounds; Intermetallic; Joints; Silicon; Silicon devices; Solids;
Conference_Titel :
Advanced Packaging Materials (APM), 2013 IEEE International Symposium on
Conference_Location :
Irvine, CA
Print_ISBN :
978-1-4673-6093-7
Electronic_ISBN :
1550-5723
DOI :
10.1109/ISAPM.2013.6510386