Title :
Observation of InGaN cavity polaritons at room temperature
Author :
Tawara, Takehiko ; Gotoh, Hideki ; Akasaka, Tetsuya ; Kobayashi, Naoki ; Saitoh, Tadashi
Author_Institution :
NTT Basic Res. Labs., Kanagawa
Abstract :
Cavity polaritons are observed in InGaN quantum well (QW) microcavities at room temperature. The anti-crossing behavior of strong exciton-photon coupling is confirmed by vacuum-field Rabi splitting obtained from reflection measurements. The oscillator strength of InGaN QW excitons is one order of magnitude larger than that of GaAs QW excitons
Keywords :
III-V semiconductors; excitons; gallium compounds; indium compounds; light reflection; micro-optics; microcavities; polaritons; semiconductor quantum wells; InGaN; InGaN cavity polaritons; anticrossing behavior; exciton-photon coupling; oscillator strength; quantum well microcavities; reflection measurements; vacuum-field Rabi splitting;
Conference_Titel :
Quantum Electronics Conference, 2004. (IQEC). International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-778-4
