Title :
A Resistive HEMT-Mixer with Very Low LO-Power Requirements and Low Intermodulation
Author :
Zirath, Herbert ; Rorsman, Niklas
Author_Institution :
Dept. of Applied Electron Physics, Chalmers University of Technology, Göteborg, Sweden
Abstract :
The channel resistance of a High Electron Mobility Transistor (HEMT) is used as a time variable resistor to accomplish frequency mixing. An X-band image rejected mixer was constructed and pseudomorphic HEMTs were fabricated in order to investigate the performance. Acceptable conversion is obtained at very low LO-power. The experimental ¿1 dB compression point referred to the output is found to be approximately 3 dB lower than the LO-power.
Keywords :
Circuit simulation; Diodes; HEMTs; Low voltage; Mixers; Molecular beam epitaxial growth; Ohmic contacts; Radio frequency; Resistors; Semiconductor device modeling;
Conference_Titel :
Microwave Conference, 1991. 21st European
Conference_Location :
Stuttgart, Germany
DOI :
10.1109/EUMA.1991.336552
