DocumentCode
2087158
Title
Pseudomorphic AIGaAs/GaInAs Hetero-FET Structures for Low Noise and Power Applications
Author
Narozny, P. ; Dämbkes, H. ; Dickmann, J. ; Wölk, C. ; Adam, D. ; Barbier, E. ; Pons, D.
Author_Institution
Daimler-Benz AG, FAU, Wilhelm-Runge-Strasse 11, D-7900 Ulm, Germany
Volume
2
fYear
1991
fDate
9-12 Sept. 1991
Firstpage
1508
Lastpage
1512
Abstract
PM HFET based devices and circuits on GaAs substrates are developed for the low noise and for the power components of 20 GHz to 30 GHz communication links. Cut off frequencies in excess of 200 GHz, minimum noise figures below 1.4 dB at 30 GHz and below 0.9 dB at 18 GHz, output power densities of 0.6 W/mm with PAE of 44 % at 18 GHz, and 0.36 W/mm with PAE of 40 % at 30 GHz are achieved.
Keywords
Circuit noise; Conducting materials; Doping; Frequency; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Noise figure; Sheet materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1991. 21st European
Conference_Location
Stuttgart, Germany
Type
conf
DOI
10.1109/EUMA.1991.336559
Filename
4136499
Link To Document