Title :
Biexciton in single GaN/AiN self-assembled quantum dots
Author :
Kako, S. ; Hoshino, K. ; Ishida, S. ; Arakawa, Yasuhiko
Author_Institution :
Inst. of Ind. Sci., Tokyo Univ.
Abstract :
We report single dot spectroscopy of GaN/AIN self-assembled quantum dots. Excitation power dependence allows the assignment of a biexciton peak. The biexciton binding energy is negative and the magnitude is about 54 meV
Keywords :
III-V semiconductors; aluminium compounds; biexcitons; binding energy; gallium compounds; photoluminescence; self-assembly; semiconductor quantum dots; GaN-AlN; biexciton binding energy; excitation power; self-assembled quantum dots; single dot spectroscopy;
Conference_Titel :
Quantum Electronics Conference, 2004. (IQEC). International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-778-4
