DocumentCode :
2087517
Title :
2008 9th annual non-volatile memory technology symposium
fYear :
2008
fDate :
11-14 Nov. 2008
Firstpage :
1
Lastpage :
1
Abstract :
The following topics are dealt with: phase change memory, metal oxide resistive memory (including memristive switches), ion conducting (including organic) memory, ferroelectric memory, new memory concepts, flash memory, memory circuit design and integration, and NVM in reconfigurable electronics.
Keywords :
digital storage; ferroelectric storage; flash memories; integrated circuit design; integrated memory circuits; phase change memories; NVMTS08; ferroelectric memory; flash memory; ion conducting memory; memory circuit design; memory circuit integration; memristive switches; metal oxide resistive memory; new memory concepts; nonvolatile memory technology; phase change memory; reconfigurable electronics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Non-Volatile Memory Technology Symposium, 2008. NVMTS 2008. 9th Annual
Conference_Location :
Pacific Grove, CA
Print_ISBN :
978-1-4244-3659-0
Type :
conf
DOI :
10.1109/NVMT.2008.4731181
Filename :
4731181
Link To Document :
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