Influence of pn junction surface region upon the peak pulse power of silicon transient voltage suppressors

Author

Obreja, V.V.N.

Author_Institution

Nat. R&D Inst. for Microtechnol., Bucharest, Romania

Volume

2

fYear

1997

fDate

7-11 Oct 1997

Firstpage

331

Abstract

It is shown that over 200-250 V nominal breakdown voltage, a premature junction surface breakdown at a voltage which is at least 50 V less than the bulk breakdown voltage value may appear. Such a suppressor is not able to withstand the expected value of the peak pulse power. If no premature breakdown occurs, the peak pulse power may be still affected by the surface component of the leakage current at high junction temperature. At nominal breakdown voltage lower than 200 V, less influence of the junction surface is exhibited on the suppressor power capability

Keywords

electric breakdown; elemental semiconductors; leakage currents; overvoltage protection; p-n junctions; power semiconductor devices; silicon; surface conductivity; 200 to 250 V; Si; Si transient voltage suppressors; breakdown voltage; bulk breakdown voltage; high junction temperature; leakage current; peak pulse power; pn junction surface region; premature junction surface breakdown; suppressor power capability; surface component; Circuit testing; Current-voltage characteristics; Oscilloscopes; Pulse shaping methods; Shape; Silicon; Space vector pulse width modulation; Surges; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International

Conference_Location

Sinaia

Print_ISBN

0-7803-3804-9

Type

conf

DOI

10.1109/SMICND.1997.651041

Filename

651041