DocumentCode
2087565
Title
Rewriting flash memories and dirty-paper coding
Author
Kurkoski, Brian M.
Author_Institution
Japan Adv. Inst. of Sci. & Technol., Nomi, Japan
fYear
2013
fDate
9-13 June 2013
Firstpage
4353
Lastpage
4357
Abstract
This paper considers that write-once memory (WOM) codes can be seen as a type of dirty-paper code. The current state of the memory, which is known to the encoder, plays the role of the known interference of dirty-paper coding. Erez, Shamai and Zamir showed that lattice strategies can achieve the capacity of the known-interference channel. In this paper, lattices are used to design a WOM code. Encoding is performed modulo a shaping lattice with respect to a lattice fundamental region to obtain a codeword, to be added to the current state of the memory. The fundamental region is designed to accommodate the limitations of the flash memory system, particularly, that values can only increase. The criterion for evaluation is average number of writes. In order to improve the average number of writes, “coset select” bits are introduced, to maximize the average number of writes. For an eight-dimensional lattice, numerical results for practical parameter choices show a promising trend.
Keywords
error correction codes; flash memories; write-once storage; dirty paper coding; eight dimensional lattice; flash memories; known interference channel; lattice fundamental region; write once memory codes; Ash; Complexity theory; Conferences; Decoding; Encoding; Interference; Lattices;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications (ICC), 2013 IEEE International Conference on
Conference_Location
Budapest
ISSN
1550-3607
Type
conf
DOI
10.1109/ICC.2013.6655250
Filename
6655250
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