DocumentCode :
2087605
Title :
Optimization of phase change RAM write performance for large memory array
Author :
Philipp, Jan Boris ; Ruf, Bernhard ; Rüster, Christian ; Andres, Dieter ; Majewski, Petra ; Kund, Michael ; Happ, Thomas D. ; Bergmann, Renate
Author_Institution :
Qimonda AG, Unterhaching, Germany
fYear :
2008
fDate :
11-14 Nov. 2008
Firstpage :
1
Lastpage :
3
Abstract :
This paper analyzes the crystallization statistics and optimizes the performance of complex doped GST on 256 kb memory arrays in 180 nm CMOS technology. A novel method of deriving an optimized SET strategy from the RESET current distribution is developed. This significantly improves performance and results in 200 ns SET time. A large Rreset/Rset ratio can be maintained even after 8E6 cycles.
Keywords :
CMOS memory circuits; phase change memories; CMOS technology; GST; RESET current distribution; byte rate 256 kByte/s; crystallization statistics; large memory array; phase change RAM write; size 180 nm; time 200 ns; CMOS technology; Crystallization; Current distribution; Optimization methods; Performance analysis; Phase change random access memory; Phased arrays; Random access memory; Statistical analysis; Statistical distributions; PCRAM; chalcogenide; doping; mushroom; set;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Non-Volatile Memory Technology Symposium, 2008. NVMTS 2008. 9th Annual
Conference_Location :
Pacific Grove, CA
Print_ISBN :
978-1-4244-3659-0
Electronic_ISBN :
978-1-4244-2411-5
Type :
conf
DOI :
10.1109/NVMT.2008.4731185
Filename :
4731185
Link To Document :
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