Recovery and other effects of annihilation of high current density filaments after switching in chalcogenide alloys.

Results of detailed experimental study of recovery times of threshold voltage, low field resistance, threshold current and maximum delay are reported with different film thickness. It was shown that the shortest recovery time has low field resistance. Threshold voltage and current recovery proceed slower. The threshold current recovery curve for OTS alloy demonstrates minima and saturates synchronously with V_th. Using multi-pulse technique for independent variation of OFF-state voltage, ON-state current and delay time, it was found that these factors addressed different parameters of the device recovery process. The data prove that only processes during the delay time of switching can affect recovery of threshold voltage and current of switching. Observed behavior could be explained with a model of inhomogeneous media with localized in a channel negative differential conductivity of S-type (S-NDC).