• DocumentCode
    2087640
  • Title

    Phase change memory parameters: Effects of atomic transformations

  • Author

    Karpov, I. ; Kau, D. ; Spadini, G. ; Karpov, V.

  • Author_Institution
    Intel Corp., Santa Clara, CA, USA
  • fYear
    2008
  • fDate
    11-14 Nov. 2008
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    We discuss key PCM device parameters and their variations. In particular, we show how effects of atomic transformations result in unique device behaviors such as delay time, temporal changes of parameters, under-threshold and others. Concepts of nucleation switching, atomic double well potential and disordered glass structure are introduced to explain experimental data collected.
  • Keywords
    phase change memories; PCM device parameters; atomic double well potential; atomic transformation; delay time; disordered glass structure; nucleation switching; phase change memory parameter; temporal changes of parameters; unique device behaviors; Amorphous materials; Amorphous semiconductors; Crystalline materials; Crystallization; Delay effects; Electrical resistance measurement; Electrodes; Phase change materials; Phase change memory; Threshold voltage; Chalcogenide; Ge2Sb2Te5- (GST); drift; ovonic unified memory (OUM); phase change memory (PCM); threshold switching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Memory Technology Symposium, 2008. NVMTS 2008. 9th Annual
  • Conference_Location
    Pacific Grove, CA
  • Print_ISBN
    978-1-4244-3659-0
  • Electronic_ISBN
    978-1-4244-2411-5
  • Type

    conf

  • DOI
    10.1109/NVMT.2008.4731187
  • Filename
    4731187
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2087640