Title :
A bonded-SOI-wafer CMOS 16-bit 50-ksps delta-sigma ADC
Author :
Takaramoto, Toshiharu ; Harajiri, Shuichi ; Sawada, Masaru ; Kobayashi, Osamu ; Gotoh, Kunihiko
Author_Institution :
Fujitsu Ltd., Kawasaki, Japan
Abstract :
A CMOS 16-b 50-ks/s delta-sigma ADC (analog-to-digital converter) on a bonded-silicon-on-insulator (SOI) wafer has been fabricated. An 87-dB dynamic range and an 8-dB SNR improvement compared to results for a conventional wafer have been achieved. The SOI with trench structure eliminated noise interference, because the analog portion and the digital one were electrically isolated between their substrates. In addition, the accuracy was improved by stable diffusion resistors which were free from the dependence on the substrate voltage
Keywords :
CMOS integrated circuits; analogue-digital conversion; interference suppression; 8 dB; A/D convertor; CMOS; SNR improvement; bonded-SOI-wafer; delta-sigma ADC; noise interference; stable diffusion resistors; trench structure; Analog circuits; Annealing; Circuit noise; Crystallization; Digital circuits; Interference; Noise reduction; Resistors; Voltage; Wafer bonding;
Conference_Titel :
Custom Integrated Circuits Conference, 1991., Proceedings of the IEEE 1991
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0015-7
DOI :
10.1109/CICC.1991.164100
