• DocumentCode
    2087658
  • Title

    Gain saturation in multilayer GaInP quantum dots

  • Author

    Lutti, J. ; Lewis, G.M. ; Smowton, P.M. ; Blood, P. ; Krysa, A.

  • Author_Institution
    Dept. of Phys. & Astron., Cardiff Univ.
  • fYear
    2004
  • fDate
    21-21 May 2004
  • Firstpage
    684
  • Lastpage
    685
  • Abstract
    We have measured the optical gain of InP/GalnP dots under electrical injection. Gain saturation, typical of dots, is observed at a value of 13 cm-1 at room temperature. This is sufficient for a working laser
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; optical multilayers; optical saturation; quantum dot lasers; semiconductor optical amplifiers; semiconductor quantum dots; 20 degC; InP-GaInP; electrical injection; gain saturation; multilayer GaInP quantum dots; optical gain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics Conference, 2004. (IQEC). International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-55752-778-4
  • Type

    conf

  • Filename
    1366953
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2087658