DocumentCode :
2087658
Title :
Gain saturation in multilayer GaInP quantum dots
Author :
Lutti, J. ; Lewis, G.M. ; Smowton, P.M. ; Blood, P. ; Krysa, A.
Author_Institution :
Dept. of Phys. & Astron., Cardiff Univ.
fYear :
2004
fDate :
21-21 May 2004
Firstpage :
684
Lastpage :
685
Abstract :
We have measured the optical gain of InP/GalnP dots under electrical injection. Gain saturation, typical of dots, is observed at a value of 13 cm-1 at room temperature. This is sufficient for a working laser
Keywords :
III-V semiconductors; gallium compounds; indium compounds; optical multilayers; optical saturation; quantum dot lasers; semiconductor optical amplifiers; semiconductor quantum dots; 20 degC; InP-GaInP; electrical injection; gain saturation; multilayer GaInP quantum dots; optical gain;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics Conference, 2004. (IQEC). International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-778-4
Type :
conf
Filename :
1366953
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2087658
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