DocumentCode :
2087670
Title :
A 0.08–3GHz high gain UWB LNA with improved flatness
Author :
Hua Chen ; Peng Gao ; Shuang He ; Bin Yuan
Author_Institution :
Res. Inst. of Electron. Sci. & Technol., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear :
2013
fDate :
24-25 Oct. 2013
Firstpage :
411
Lastpage :
414
Abstract :
An ultra-wide band (UWB) low noise amplifier (LNA) of bandwidth 0.08-3GHz, gain more than 28dB, flatness fluctuating in ± 1dB and noise-figure less than 2.3dB is designed and tested. This LNA utilizes the characteristic of reactance value changing with frequency, especially, adopts capacitance negative-feedback in source electrode to compensate the decrease of high frequency gain. Comparing with traditional inductance negative feedback between drain electrode and gate electrode, this adding capacitance feedback can improve gain-flatness obviously. Furthermore, a transmission line of λ/4 is used to achieve broadband match of input and output port, as a result, the voltage standing-wave ratio (VSWR) of input and output port don´t exceed 2. Simulated and measured results are in good agreement.
Keywords :
UHF amplifiers; electrodes; feedback amplifiers; low noise amplifiers; microwave amplifiers; UWB LNA; VSWR; bandwidth 0.08 GHz to 3 GHz; capacitance negative-feedback; drain electrode; flatness fluctuation; gate electrode; improved flatness; inductance negative feedback; reactance value; source electrode; ultra-wide band low noise amplifier; voltage standing-wave ratio; Capacitance; Frequency measurement; Indexes; Logic gates; Negative feedback; Radar; Receivers; broadband matching; capacitance negative-feedback; low noise amplifier; ultra-wide band;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Millimeter Wave Circuits and System Technology (MMWCST), 2013 International Workshop on
Conference_Location :
Chengdu
Type :
conf
DOI :
10.1109/MMWCST.2013.6814538
Filename :
6814538
Link To Document :
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