• DocumentCode
    2087672
  • Title

    Ionic memories: Status and challenges

  • Author

    Chen, An

  • Author_Institution
    Strategic Technol. Group, Sunnyvale, CA, USA
  • fYear
    2008
  • fDate
    11-14 Nov. 2008
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    Ionic memory is a type of resistive switching memories based on ionic transport and electrochemical reactions in solid-state electrolyte materials. In cation-migration-based ionic memories, cations transport through solid electrolyte under electric field and deposit as metal atoms to form connecting bridge between two electrodes. With repeatable resistance change over several orders of magnitude and long retention, ionic memory is a promising candidate for next generation non-volatile memories. The advantages of ionic memories include low operation voltage and highly scalable device size. As two-terminal devices with hysteretic resistive behavior, ionic memories may enable novel architectures and algorithms. The major challenge for ionic memories exists in operation reliability. This paper will review the R&D status of ionic memory technology and discuss the challenges.
  • Keywords
    electric fields; electrolytes; positive ions; random-access storage; electric field; electrochemical reactions; hysteretic resistive behavior; ionic transport; migration-based ionic memories; resistive switching memories; solid-state electrolyte materials; Atomic layer deposition; Bridge circuits; Electrodes; Ferroelectric films; Nonvolatile memory; Phase change materials; Random access memory; Solids; Switches; Voltage; Nonvolatile memory; RRAM; ionic memory; resistive switch;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Memory Technology Symposium, 2008. NVMTS 2008. 9th Annual
  • Conference_Location
    Pacific Grove, CA
  • Print_ISBN
    978-1-4244-3659-0
  • Electronic_ISBN
    978-1-4244-2411-5
  • Type

    conf

  • DOI
    10.1109/NVMT.2008.4731188
  • Filename
    4731188