Title :
Formulation of capacitance of rapid thermal annealed junction
Author :
Javan, Hank ; Spurlin, John ; Desai, Raj
Author_Institution :
Dept. of Electron. & Comput. Technol., North Carolina A&T State Univ., Greensboro, NC, USA
Abstract :
This paper provides an analytical expression for charge distribution and electric field of a rapid thermally annealed junction device. A numerical method is used and simulated results are compared with the experimental values. Our results indicate that Rapid Thermal Annealed process is a valid and economical method to produce microwave devices
Keywords :
annealing; capacitance; rapid thermal processing; semiconductor device models; solid-state microwave devices; capacitance; charge distribution; electric field; microwave devices; numerical method; rapid thermal annealed junction; Capacitance; Computational modeling; Equations; Finite difference methods; Java; Lagrangian functions; Microelectronics; Polynomials; Rapid thermal annealing; Rapid thermal processing;
Conference_Titel :
Southeastcon '94. Creative Technology Transfer - A Global Affair., Proceedings of the 1994 IEEE
Conference_Location :
Miami, FL
Print_ISBN :
0-7803-1797-1
DOI :
10.1109/SECON.1994.324279
