Title :
A millimeter-wave 6-bit GaAs monolithic digital attenuator with low insertion phase shift
Author_Institution :
Sch. of Phys. Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A millimeter-wave 6-bit GaAs monolithic digital attenuator with low insertion phase shift is presented. This attenuator is fabricated with E.D process, the six main attenuation bits are 0.5, 1, 2, 4, 8, 16dB. From the measurement results of this MMIC chip in the 19-23GHz band show that the 6-bit GaAs monolithic digital attenuator has 0.5dB resolution and 35.5dB dynamic attenuation range, return loss are less than -11dB for all attenuation states, and attenuation accuracy: +1.31dB/-0.13dB, insertion phase shift: +3*/-5*; referenced insertion loss <; -2.88dB; the chip size is 3.0mm×2.0mm×0.1mm; the control voltage is 0V-5V.
Keywords :
III-V semiconductors; MMIC; attenuators; gallium arsenide; millimetre wave phase shifters; ED process; GaAs; MMIC chip; bandwidth 19 GHz to 23 GHz; dynamic attenuation; insertion loss; low insertion phase shift; millimeterwave monolithic digital attenuator; size 0.1 mm; size 2 mm; size 3 mm; voltage 0 V to 5 V; Attenuation measurement; Attenuators; Educational institutions; Gallium arsenide; Insertion loss; MMICs; Semiconductor device measurement; GaAs Monolithic; MMIC; Millimeter-wave; digital attenuator; low insertion phase shift;
Conference_Titel :
Microwave and Millimeter Wave Circuits and System Technology (MMWCST), 2013 International Workshop on
Conference_Location :
Chengdu
DOI :
10.1109/MMWCST.2013.6814545
