Title :
A millimeter-wave GaAs 5-bit MMIC digital phase shifter
Author :
Na Chen ; Jianyu Zhen ; Qianyun Pang
Author_Institution :
Sch. of Phys. Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
This article analyzes the phase shift principle of the monolithic digital phase shifter, and introduces the design method and the structure of each basic shift phase state, and design a 34-36 GHz 5-bit digital phase shifter. Based on the GaAs PHEMT technology, we used ADS Momentum microwave design environment to perform simulations. Finally, the main index of the 5 bit digital phase shifter are: the RMS values of the main shift phase state is less than 2.3 °; Return loss is less than - 14 dB; Insertion loss is within the range of 8.0 ~ 9.1 dB; Insertion loss fluctuations is within the range of - 0.6 ~ 0.4 dB; The chip size is 3.0 mm × 2.0 mm; Control voltage is - 5 v / 0 v. the test result shows that this design method is feasible, and points out that the design needs to be improved in various of models.
Keywords :
III-V semiconductors; MMIC phase shifters; gallium arsenide; high electron mobility transistors; millimetre wave phase shifters; ADS Momentum microwave design environment; GaAs; GaAs PHEMT technology; basic shift phase state; frequency 34 GHz to 36 GHz; loss 8.0 dB to 9.1 dB; main shift phase state; millimeter-wave GaAs MMIC digital phase shifter; monolithic digital phase shifter; phase shift principle; word length 5 bit; Abstracts; Gallium arsenide; Integrated circuit modeling; Loss measurement; Microwave circuits; Phase measurement; Simulation; Digital phase shifter; MMIC; Millimeter-wave; RMS;
Conference_Titel :
Microwave and Millimeter Wave Circuits and System Technology (MMWCST), 2013 International Workshop on
Conference_Location :
Chengdu
DOI :
10.1109/MMWCST.2013.6814546