DocumentCode :
2087866
Title :
Performance of a 100-element HBT grid amplifier
Author :
Rutledge, David B. ; Kim, Moonil ; Sovero, Emillo A. ; De Lisio, Michael P. ; Hacker, Jonathan B. ; Chiao, Jung-Chih ; Li, Shi-Jie ; Gagnon, David R. ; Rosenberg, James J.
Author_Institution :
Division of Engineering and Applied Science, California Institute of Technology, Pasadena, CA 91125
fYear :
1993
fDate :
6-10 Sept. 1993
Firstpage :
67
Lastpage :
68
Abstract :
A 100-element 10-GHz grid amplifier has been developed. The active devices in the grid are chips with heterojunction bipolar transistor (HBT) differential pairs. The peak gain of the grid was 10 dB at 10 GHz with a 3-dB bandwidth of 1 GHz. The input and output matches are better than 15 dB at 10 GHz. The maximum output power is 450 mW, and the minimum noise figure is 7dB. Tests show that the grid is quite tolerant of failures - the output power dropped by only 1 dB when 10% of the inputs were detuned. The device amplifies beams with incidence angles up to 30° with less than a 3-dB drop in power. By providing external feedback with a twist reflector, the grid amplifier can be used as a 6.5-GHz to 11.5-GHz tunable source with a peak effective radiated power (ERP) of 6.3 W at 9.9 GHz.
Keywords :
Gain measurement; Heterojunction bipolar transistors; Microwave amplifiers; Noise figure; Noise measurement; Power amplifiers; Power generation; Resistors; Testing; Weapons;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1993. 23rd European
Conference_Location :
Madrid, Spain
Type :
conf
DOI :
10.1109/EUMA.1993.336772
Filename :
4136530
Link To Document :
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