Title :
Design of a Ka-band GaN HEMT power amplifier based on simulation
Author :
Xiaobin Luo ; Chao Yue ; Lijie Zhou ; Weihua Yu ; Xin Lv
Author_Institution :
Lab. of Microwave Commun. & Electron. Syst., Beijing Inst. of Technol., Beijing, China
Abstract :
Based on the working mechanism of GaN components and monolithic microwave integrated power amplifiers, a four-stage and four-channel power amplifier design scheme has been realized by simulation in the paper. The physical structure of the GaN HEMT is proposed. Then DC and RF characteristics of the device are simulated in Silvaco. The S-parameters are extracted to design a power amplifier circuit in ADS according to the structure and electric performance of the HEMT. The results show that the output power of the amplifier circuit can reach 5.6W and the power gain is 21dB at 35GHz under CW condition. The PAE of the whole circuit is about 20%. Therefore, this power amplifier can be applied to Ka-band.
Keywords :
III-V semiconductors; MMIC power amplifiers; S-parameters; gallium compounds; high electron mobility transistors; integrated circuit design; microwave amplifiers; radiofrequency power amplifiers; wide band gap semiconductors; DC characteristics; GaN; Ka-band HEMT power amplifier; RF characteristics; S-parameters; frequency 35 GHz; gain 21 dB; monolithic microwave integrated power amplifiers; power 5.6 W; Gallium nitride; HEMTs; Indexes; Laboratories; Power amplifiers; Power generation; Substrates; GaN HEMT; Ka-band; S-parameter; power amplifier;
Conference_Titel :
Microwave and Millimeter Wave Circuits and System Technology (MMWCST), 2013 International Workshop on
Conference_Location :
Chengdu
DOI :
10.1109/MMWCST.2013.6814550
