Title :
Ultra-low-noise receivers for the 1 to 120 GHz frequency range
Author :
Pospieszalski, Marian W.
Author_Institution :
National Radio Astronomy Observatory, 2015 Ivy Road, Charlottesville, VA 22903 Tel: (804) 296-0350; Fax: (804) 296-0324; e-mail: mpospies@nrao.edu
Abstract :
Recent developments in ultra-low-noise receiver technology for frequencies up to 120 GHz are discussed. The following main topics are covered: - a short review of competing low-noise devices, - noise and signal properties of heterostructure field-effect transistors (HFET´s) at cryogenic temperatures, - design and examples of the realization of wideband low-noise, cryogenically-coolable HFET amplifiers in the 1 to 120 GHz range, - examples of HFET receiver realizations and the factors limiting their performance, and - a comparison of competing ultra-low-noise receiver technologies (masers, SIS/HFET IF amplifier tandems) in the 1 to 120 GHz frequency range. Illustrative examples of the different receivers installed on U.S.-based antennas are presented, followed by a short discussion of possible future developments.
Keywords :
Broadband amplifiers; Cryogenics; Frequency; HEMTs; Low-noise amplifiers; MODFETs; Masers; Signal design; Temperature distribution; Ultra wideband technology;
Conference_Titel :
Microwave Conference, 1993. 23rd European
Conference_Location :
Madrid, Spain
DOI :
10.1109/EUMA.1993.336794