2D simulations of non-local transport effects in deep-submicrometer HEMTs

Author

Zhiming Wang ; Xiaobin Luo ; Weihua Yu ; Xin Lv

Author_Institution

Sch. of Inf. & Electron., Beijing Inst. of Technol., Beijing, China

fYear

2013

fDate

24-25 Oct. 2013

Firstpage

468

Lastpage

470

Abstract

In this paper, conventional drift-diffusion model was introduced and the disadvantage was analysed when the device dimensions shrink to deep-submicrometer regime, non-local effects are expected to become more prominent. To investigate non-local transport effects in InAlAs/InGaAs HEMT´s, energy-balance model was taken into account. Velocity overshoot caused by non-equivalence of electron momentum and energy relaxation times was analysed and is responsible for the increasing drain current and transconductance.

Keywords

III-V semiconductors; carrier relaxation time; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; 2D simulations; InAlAs-InGaAs; InAlAs-InGaAs HEMT; deep-submicrometer HEMT; deep-submicrometer regime; drain current; drift-diffusion; electron momentum; energy relaxation times; energy-balance model; nonlocal transport effects; transconductance; velocity overshoot; Analytical models; Educational institutions; Energy measurement; Indium gallium arsenide; Transconductance; Velocity measurement; HEMTs; Non-local transport effects; Velocity overshoot; energy relaxation times; simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Circuits and System Technology (MMWCST), 2013 International Workshop on

Conference_Location

Chengdu

Type

conf

DOI

10.1109/MMWCST.2013.6814553

Filename

6814553