Title :
2D simulations of non-local transport effects in deep-submicrometer HEMTs
Author :
Zhiming Wang ; Xiaobin Luo ; Weihua Yu ; Xin Lv
Author_Institution :
Sch. of Inf. & Electron., Beijing Inst. of Technol., Beijing, China
Abstract :
In this paper, conventional drift-diffusion model was introduced and the disadvantage was analysed when the device dimensions shrink to deep-submicrometer regime, non-local effects are expected to become more prominent. To investigate non-local transport effects in InAlAs/InGaAs HEMT´s, energy-balance model was taken into account. Velocity overshoot caused by non-equivalence of electron momentum and energy relaxation times was analysed and is responsible for the increasing drain current and transconductance.
Keywords :
III-V semiconductors; carrier relaxation time; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; 2D simulations; InAlAs-InGaAs; InAlAs-InGaAs HEMT; deep-submicrometer HEMT; deep-submicrometer regime; drain current; drift-diffusion; electron momentum; energy relaxation times; energy-balance model; nonlocal transport effects; transconductance; velocity overshoot; Analytical models; Educational institutions; Energy measurement; Indium gallium arsenide; Transconductance; Velocity measurement; HEMTs; Non-local transport effects; Velocity overshoot; energy relaxation times; simulation;
Conference_Titel :
Microwave and Millimeter Wave Circuits and System Technology (MMWCST), 2013 International Workshop on
Conference_Location :
Chengdu
DOI :
10.1109/MMWCST.2013.6814553
