Title :
MIM serie capacitor model for MMIC design application
Author :
Tiwat, Pongthavornkamol ; Yuan Tingting ; Liu Guoguo ; Chen Xiaojuan ; Liu Xinyu
Author_Institution :
Inst. of Microelectron., Univ. of Chinese Acad. of Sci., Beijing, China
Abstract :
A new proposed Metal-Insulator-Metal (MIM) series capacitor model for Monolithic Microwave Integrated Circuit is presented. The MIM series capacitor model covers the frequency range up to 40 GHz for millimeter-wave circuit design application. The parasitic elements of model are extracted by parameters fitting optimization between the measured S-parameters and model simulated result. The relationship between the optimized parasitic element values and the dimension data of capacitor structure can be expressed.
Keywords :
MIM devices; MMIC; S-parameters; capacitors; integrated circuit design; MIM series capacitor model; MMIC design application; S-parameters; capacitor structure; metal-insulator-metal series capacitor model; millimeter-wave circuit design application; monolithic microwave integrated circuit; parameters fitting optimization; parasitic elements; Atmospheric modeling; Capacitors; Dielectric measurement; Feeds; Silicon carbide; MIM Capacitor; MMIC; PECVD; RF-Power amplifiers;
Conference_Titel :
Microwave and Millimeter Wave Circuits and System Technology (MMWCST), 2013 International Workshop on
Conference_Location :
Chengdu
DOI :
10.1109/MMWCST.2013.6814555
