DocumentCode
2088120
Title
MODFET technology optimization for MMICs using statistical microwave characterization
Author
Braunstein, Jürgen ; Tasker, P.J. ; Hülsmann, A. ; Köhler, K. ; Kaufel, G. ; Schlechtweg, M.
Author_Institution
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, D-79108 Freiburg, Germany. Phone +49-761-5159-534, Fax +49-761-5159-400, e-mail: braunstein@iaf.fhg.de
fYear
1993
fDate
6-10 Sept. 1993
Firstpage
107
Lastpage
109
Abstract
77 GHz LNAs and TWAs operating from DC to 80 GHz were fabricated successfully [1],[2] using a highly reproducible MODFET technology with mushroom gates of 0.16 ¿m length. Technology development and optimization were carried out using DC and RF wafer mapping. A high yield high performance transistor process required for 70 to 80 GHz applications was therefore established.
Keywords
Equivalent circuits; HEMTs; MMICs; MODFETs; Microwave technology; Monitoring; Parasitic capacitance; Radio frequency; Scattering parameters; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1993. 23rd European
Conference_Location
Madrid, Spain
Type
conf
DOI
10.1109/EUMA.1993.336803
Filename
4136541
Link To Document