DocumentCode :
2088278
Title :
Room temperature photoluminescence from tensile-strained germanium-on-insulator fabricated by a Ge condensation technique
Author :
Shihao Huang ; Weifang Lu ; Cheng Li ; Wei Huang ; Hongkai Lai ; Songyan Chen
Author_Institution :
Dept. of Phys., Xiamen Univ., Xiamen, China
fYear :
2012
fDate :
7-10 Nov. 2012
Firstpage :
1
Lastpage :
3
Abstract :
We report a biaxial tensile strain as large as 0.60 % in an ultra-thin germanium-on-insulator fabricated by a Ge condensation technique. Room temperature direct band photoluminescence from the material is significantly enhanced.
Keywords :
condensation; elemental semiconductors; germanium; photoluminescence; semiconductor-insulator boundaries; tensile strength; Ge; biaxial tensile strain; condensation; room temperature photoluminescence; ultrathin germanium-on-insulator;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
ISSN :
2162-108X
Print_ISBN :
978-1-4673-6274-0
Type :
conf
Filename :
6510582
Link To Document :
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