Title :
GHGs reduction using the catalytic gas decomposition system
Author :
Kinoshita, Hideo ; Matsuzaki, Sakae
Author_Institution :
Renesas Eastern Japan Semicond. Inc., Gunma
Abstract :
The GHG emission reduction activity for the semiconductor factory has been described. As a result of the C2F6 gas and SF6 gas emission reduction countermeasures taken, the total GHG emissions could be reduced by 51% compared with 1995. The catalytic gas decomposition system was installed for SF6 gas, which was emitted from tungsten etching chamber. The SF6 gas decomposition ratio has been maintained at over 99.9% for one year. Regarding the degradation of the catalytic gas decomposition system (due to tungsten etching process by-products), analysis indicates that the dry trapping equipment introduction improved the maintenance interval by more than one year. As a result, a low running cost could be achieved
Keywords :
air pollution control; carbon compounds; catalysis; decomposition; etching; industrial plants; integrated circuit manufacture; sulphur compounds; C2F6; GHG emission reduction; SF6; catalytic gas decomposition system; dry trapping equipment; gas decomposition ratio; gas emission reduction countermeasures; greenhouse gas; maintenance interval; semiconductor factory; tungsten etching chamber; Cleaning; Costs; Degradation; Dry etching; Gases; Global warming; Production facilities; Protocols; Safety; Tungsten;
Conference_Titel :
Semiconductor Manufacturing, 2005. ISSM 2005, IEEE International Symposium on
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9143-8
DOI :
10.1109/ISSM.2005.1513282
