Title :
III-nitride based thermoelectric - Current status and future potential
Author :
Jing Zhang ; Hua Tong ; Guangyu Liu ; Tansu, N.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
The current status and future potential of III-Nitride semiconductors are reviewed for thermoelectric applications. Promising thermoelectric properties have been shown by the III-Nitride semiconductors both in theoretical and experimental aspects, which are of great importance for high power optoelectronic devices.
Keywords :
III-V semiconductors; semiconductor devices; thermoelectric devices; thermoelectricity; wide band gap semiconductors; III-nitride based thermoelectric; III-nitride semiconductors; high power optoelectronic devices; thermoelectric applications; thermoelectric properties;
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4673-6274-0
