DocumentCode
2088891
Title
III-nitride based thermoelectric - Current status and future potential
Author
Jing Zhang ; Hua Tong ; Guangyu Liu ; Tansu, N.
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
fYear
2012
fDate
7-10 Nov. 2012
Firstpage
1
Lastpage
1
Abstract
The current status and future potential of III-Nitride semiconductors are reviewed for thermoelectric applications. Promising thermoelectric properties have been shown by the III-Nitride semiconductors both in theoretical and experimental aspects, which are of great importance for high power optoelectronic devices.
Keywords
III-V semiconductors; semiconductor devices; thermoelectric devices; thermoelectricity; wide band gap semiconductors; III-nitride based thermoelectric; III-nitride semiconductors; high power optoelectronic devices; thermoelectric applications; thermoelectric properties;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location
Guangzhou
ISSN
2162-108X
Print_ISBN
978-1-4673-6274-0
Type
conf
Filename
6510604
Link To Document