Title :
Growth of axial GaAs nanowire PN and PIN junctions
Author :
Junshuai Li ; Xin Yan ; Xia Zhang ; Xiaolong Lv ; Jiangong Cui ; Xiaomin Ren
Author_Institution :
State Key Lab. of Inf. Photonics & Opt. Commun., Beijing Univ. of Posts & Telecommun., Beijing, China
Abstract :
Axial GaAs nanowire pn and pin junctions were grown on GaAs(111)B substrate via metal-organic chemical vapor deposition (MOCVD) with Si as n-type dopant and Zn as p-type dopant. Scanning electron microscope (SEM) and high resolution transmission electron microscope (HRTEM) were applied to inspect nanowire properties such as diameter, height, crystallography property. Dopants incorporation were confirmed by energy dispersive spectrometer (EDS) scanning.
Keywords :
III-V semiconductors; MOCVD; X-ray chemical analysis; elemental semiconductors; gallium arsenide; nanofabrication; nanowires; p-n junctions; scanning electron microscopy; semiconductor growth; silicon; transmission electron microscopy; zinc; EDS; GaAs; GaAs(111)B substrate; GaAs:Si-GaAs:Zn; HRTEM; SEM; axial GaAs nanowire pin junction growth; axial GaAs nanowire pn junction growth; crystallography property; dopant incorporation; energy dispersive spectrometer scanning; high resolution transmission electron microscope; metalorganic chemical vapor deposition; n-type dopant; nanowire properties; p-type dopant; scanning electron microscope;
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4673-6274-0
