Growth of axial GaAs nanowire PN and PIN junctions

Author

Junshuai Li ; Xin Yan ; Xia Zhang ; Xiaolong Lv ; Jiangong Cui ; Xiaomin Ren

Author_Institution

State Key Lab. of Inf. Photonics & Opt. Commun., Beijing Univ. of Posts & Telecommun., Beijing, China

fYear

2012

fDate

7-10 Nov. 2012

Firstpage

1

Lastpage

3

Abstract

Axial GaAs nanowire pn and pin junctions were grown on GaAs(111)B substrate via metal-organic chemical vapor deposition (MOCVD) with Si as n-type dopant and Zn as p-type dopant. Scanning electron microscope (SEM) and high resolution transmission electron microscope (HRTEM) were applied to inspect nanowire properties such as diameter, height, crystallography property. Dopants incorporation were confirmed by energy dispersive spectrometer (EDS) scanning.

Keywords

III-V semiconductors; MOCVD; X-ray chemical analysis; elemental semiconductors; gallium arsenide; nanofabrication; nanowires; p-n junctions; scanning electron microscopy; semiconductor growth; silicon; transmission electron microscopy; zinc; EDS; GaAs; GaAs(111)B substrate; GaAs:Si-GaAs:Zn; HRTEM; SEM; axial GaAs nanowire pin junction growth; axial GaAs nanowire pn junction growth; crystallography property; dopant incorporation; energy dispersive spectrometer scanning; high resolution transmission electron microscope; metalorganic chemical vapor deposition; n-type dopant; nanowire properties; p-type dopant; scanning electron microscope;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications and Photonics Conference (ACP), 2012 Asia

Conference_Location

Guangzhou

ISSN

2162-108X

Print_ISBN

978-1-4673-6274-0

Type

conf

Filename

6510620