DocumentCode
2089407
Title
All-optical triode based on cross gain modulation using InAs quantum dot semiconductor optical amplifiers
Author
Maeda, Yuji
Author_Institution
Sch. of Sci. & Eng., Dept. of Electr. & Electron. Eng., Kinki Univ., Higashi-Osaka, Japan
fYear
2012
fDate
7-10 Nov. 2012
Firstpage
1
Lastpage
3
Abstract
Semiconductor optical amplifiers (SOAs) having nano-sized quantum dot (QD) particles show attractive features such as the achievement of a steady temperature characteristic, low power consumption, and a high-speed response to the input signal. We designed active layer of 15 stacks of InAs QDs, AlGaAs/GaAs double heterostructure and fabricated QD-SOAs for optical triode that can be used with a 1.3 μm band. Our results demonstrate input, control and out put waveforms, and response time of two optical triodes. It is confirmed high speed response characteristics of the optical triode obtained respond to higher bit rate of 40 Gbps.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; low-power electronics; quantum dot lasers; semiconductor optical amplifiers; triodes; AlGaAs-GaAs; InAs; QD-SOA; active layer; all-optical triode; bit rate 40 Gbit/s; cross gain modulation; double heterostructure; low power consumption; nanosized quantum dot particles; quantum dot semiconductor optical amplifiers; steady temperature characteristic; wavelength 1.3 mum;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location
Guangzhou
ISSN
2162-108X
Print_ISBN
978-1-4673-6274-0
Type
conf
Filename
6510622
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