DocumentCode :
2089877
Title :
Anomalous spin dephasing in [110] GaAs quantum wells
Author :
Rudolph, J. ; Döhrmann, S. ; Hägele, D. ; Oestreich, M. ; Bichler, M. ; Schuh, D.
Author_Institution :
Institut fur Festkorperphysik, Hannover Univ.
fYear :
2004
fDate :
21-21 May 2004
Firstpage :
845
Lastpage :
846
Abstract :
We report on strongly orientation-dependent spin decoherence (gammax/gammaz > 10) and a surprising decrease of spin decoherence time with rising temperature in (110) GaAs multiquantum-wells, which we explain by a new spin dephasing mechanism based on inter-subband scattering
Keywords :
III-V semiconductors; gallium arsenide; magneto-optical effects; magnetoelectronics; semiconductor quantum wells; spin polarised transport; GaAs; GaAs multiquantum wells; intersubband scattering; spin decoherence time; spin dephasing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics Conference, 2004. (IQEC). International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-778-4
Type :
conf
Filename :
1367030
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2089877
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