Polishing time calculation method to reduce oxide-film-CMP send-ahead works

Author

Morisawa, Toshihiro ; Abe, Hisahiko ; Tachikawa, Kousaku ; Nakajima, Toshihiro

Author_Institution

Hitachi Ltd., Kanagawa, Japan

fYear

2005

fDate

13-15 Sept. 2005

Firstpage

158

Lastpage

161

Abstract

In order to obtain higher throughput maintaining high precision in the CMP process, it is important to reduce send-ahead work and rework related to film thickness over the within-wafer distribution. This paper presents a new polishing time calculation method that ensures film thicknesses at all measurement positions satisfy the control limit, and gives a judgment on whether send-ahead work is necessary, with the margin of variation of film thicknesses from the control limits after CMP based on the within-wafer distribution of the removal rate and film thickness before CMP. The CMP-APC system applying these methods reduces the defects in film thickness after CMP, along with the amount of send-ahead work, which is half that of the former CMP-APC run-to-run control system.

Keywords

chemical mechanical polishing; integrated circuit manufacture; integrated circuit measurement; precision engineering; process control; semiconductor thin films; thickness control; CMP process; CMP-APC system; advanced process control; chemical mechanical polishing; film thickness; polishing time calculation method; run-to-run control system; send-ahead work; within-wafer distribution; Control systems; Parameter estimation; Position measurement; Thickness control; Thickness measurement; Throughput; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing, 2005. ISSM 2005, IEEE International Symposium on

Print_ISBN

0-7803-9143-8

Type

conf

DOI

10.1109/ISSM.2005.1513323

Filename

1513323