Title :
New method of global planarization for Si ULSI
Author :
Prybyla, J.A. ; Taylor, G.N.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
In this paper, a new method for obtaining global planarization of patterned Si ULSI wafers is described. This method is unique in that it is very simple, clean, and potentially high throughput. Here we report on the excellent planarization results obtainable. The key idea is a contact scheme for applying and planarizing a sacrificial layer over the patterned wafer. A critical element has been the use of an optical flat coated with a monolayer of release agent.<>
Keywords :
VLSI; elemental semiconductors; integrated circuit technology; silicon; surface treatment; Si; Si ULSI; contact scheme; global planarization; monolayer; optical flat; patterned wafers; release agent; sacrificial layer; throughput; Curing; Etching; Fabrication; Optical materials; Optical polymers; Planarization; Surfaces; Testing; Throughput; Ultra large scale integration;
Conference_Titel :
VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-1921-4
DOI :
10.1109/VLSIT.1994.324370
