DocumentCode
2089946
Title
Spin relaxation measurements in GaAs high above the band gap
Author
Nemec, P. ; Kerachian, Y. ; van Driel, H.M. ; Smirl, Arthur L.
Author_Institution
Dept. of Phys., Toronto Univ., Ont.
fYear
2004
fDate
21-21 May 2004
Firstpage
849
Lastpage
850
Abstract
When energy of the probe pulse is well above the band gap, we demonstrate that the correct spin relaxation time in bulk GaAs can be inferred only after carrier cooling, band dispersion and carrier statistics are taken into account
Keywords
III-V semiconductors; electron spin polarisation; energy gap; gallium arsenide; high-speed optical techniques; GaAs; band dispersion; band gap; carrier cooling; carrier statistics; spin relaxation;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference, 2004. (IQEC). International
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-778-4
Type
conf
Filename
1367032
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