Title :
Spin relaxation measurements in GaAs high above the band gap
Author :
Nemec, P. ; Kerachian, Y. ; van Driel, H.M. ; Smirl, Arthur L.
Author_Institution :
Dept. of Phys., Toronto Univ., Ont.
Abstract :
When energy of the probe pulse is well above the band gap, we demonstrate that the correct spin relaxation time in bulk GaAs can be inferred only after carrier cooling, band dispersion and carrier statistics are taken into account
Keywords :
III-V semiconductors; electron spin polarisation; energy gap; gallium arsenide; high-speed optical techniques; GaAs; band dispersion; band gap; carrier cooling; carrier statistics; spin relaxation;
Conference_Titel :
Quantum Electronics Conference, 2004. (IQEC). International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-778-4
