Title :
A high-linearity S-band SiGe HBT low-noise amplifier design
Author :
Yang Zong-shuai ; Niehai ; Han Wen-tao
Author_Institution :
Beijing Age Long Sci. & Technol. Ltd., Chengdu Univ. of Inf. Technol., Beijing, China
Abstract :
A 2.1~2.5GHz SiGe HBT low-noise amplifier (LNA) with highly linearity and low-noise is described. The LNA is designed with a novel resistor feedback bias circuit structure which be aimed to obtain excellent linearity performance. On-chip balun is used for single-to-differential conversion between the LNA and the down-conversion mixer. The simulated results show that the transmission gain is 11.9dB with less than 0.3dB variation in 60M frequency range, noise figure varies between 1.9 and 2.1dB, input reflection (S11) is less than -16.3dB and the Op1dB is more than 16dBm over the entire band. Power dissipation is 60mWat 5V supply.
Keywords :
Ge-Si alloys; MMIC amplifiers; MMIC mixers; baluns; bipolar MIMIC; circuit feedback; low noise amplifiers; HBT low-noise amplifier design; LNA; SiGe; UHF amplifiers; down-conversion mixer; frequency 2.1 GHz to 2.5 GHz; gain 11.9 dB; linearity performance; noise figure 1.9 dB to 2.1 dB; on-chip balun; power 60 mW; resistor feedback bias circuit; voltage 5 V; Bluetooth; Heterojunction bipolar transistors; Impedance matching; Linearity; Nickel; Resistors; Wireless communication; SiGe HBT; high-linearity; low noise amplifiers; resistor feedback; s-band;
Conference_Titel :
Microwave and Millimeter Wave Circuits and System Technology (MMWCST), 2013 International Workshop on
Conference_Location :
Chengdu
DOI :
10.1109/MMWCST.2013.6814639
