Title :
Characterization of strip induced damage in ultra low-k dielectric
Author :
Tsai, J.S. ; Su, Y.N. ; Huang, R.Y. ; Chiou, J.M. ; Shieh, J.H. ; Chu, H.Y. ; Lee, J.J. ; Ting, C.Y. ; Jang, S.M. ; Liang, M.S.
Author_Institution :
Div. of Adv. Module Technol., Taiwan Semicond. Manuf. Co. Ltd., Hsinchu, Taiwan
Abstract :
STEM-EDS analysis on the sidewall surface of ultra low-k dielectric (ULK), a CVD SiOC type low-k dielectric (k ≈ 2.5), has been performed to study the damage behavior of low-k material during strip. Carbon depletion was observed on the sidewall surface by plasma strip using N2/H2, H2, and O2 chemistries in different ashers. The strip using N2/H2 has minimum damage of low-k material because it forms a nitridation layer protecting ULK from subsequent damage whereas RIE mitigates the damage because of the nature of less chemical reaction.
Keywords :
chemical vapour deposition; dielectric materials; dielectric thin films; nitridation; photoresists; sputter etching; CVD; STEM-EDS analysis; carbon depletion; nitridation layer; plasma strip; strip induced damage; ultra low-k dielectric; Dielectric constant; Dielectric materials; Dielectric measurements; Hydrogen; Manufacturing processes; Plasma applications; Plasma chemistry; Plasma measurements; Semiconductor device manufacture; Strips;
Conference_Titel :
Semiconductor Manufacturing, 2005. ISSM 2005, IEEE International Symposium on
Print_ISBN :
0-7803-9143-8
DOI :
10.1109/ISSM.2005.1513330
