Characterization of strip induced damage in ultra low-k dielectric

Author

Tsai, J.S. ; Su, Y.N. ; Huang, R.Y. ; Chiou, J.M. ; Shieh, J.H. ; Chu, H.Y. ; Lee, J.J. ; Ting, C.Y. ; Jang, S.M. ; Liang, M.S.

Author_Institution

Div. of Adv. Module Technol., Taiwan Semicond. Manuf. Co. Ltd., Hsinchu, Taiwan

fYear

2005

fDate

13-15 Sept. 2005

Firstpage

183

Lastpage

185

Abstract

STEM-EDS analysis on the sidewall surface of ultra low-k dielectric (ULK), a CVD SiOC type low-k dielectric (k ≈ 2.5), has been performed to study the damage behavior of low-k material during strip. Carbon depletion was observed on the sidewall surface by plasma strip using N₂/H₂, H₂, and O₂ chemistries in different ashers. The strip using N₂/H₂ has minimum damage of low-k material because it forms a nitridation layer protecting ULK from subsequent damage whereas RIE mitigates the damage because of the nature of less chemical reaction.

Keywords

chemical vapour deposition; dielectric materials; dielectric thin films; nitridation; photoresists; sputter etching; CVD; STEM-EDS analysis; carbon depletion; nitridation layer; plasma strip; strip induced damage; ultra low-k dielectric; Dielectric constant; Dielectric materials; Dielectric measurements; Hydrogen; Manufacturing processes; Plasma applications; Plasma chemistry; Plasma measurements; Semiconductor device manufacture; Strips;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing, 2005. ISSM 2005, IEEE International Symposium on

Print_ISBN

0-7803-9143-8

Type

conf

DOI

10.1109/ISSM.2005.1513330

Filename

1513330