DocumentCode
2090163
Title
A Body Biasing Method for Charge Recovery Circuits: Improving the Energy Efficiency and DPA-Immunity
Author
Khatir, Mehrdad ; Ejlali, Alireza
Author_Institution
Dept. of Comput. Eng., Sharif Univ. of Technol., Tehran, Iran
fYear
2010
fDate
5-7 July 2010
Firstpage
195
Lastpage
200
Abstract
Charge recovery is a promising concept to design (cryptographic) VLSI circuits with low energy dissipation. However, unsatisfactory designs of proposed logic cells degrade its theoretical efficiency significantly both in its energy consumption and the resistance against differential power analysis attacks (DPA-attacks). Short circuit dissipation and non-adiabatic discharging of capacitance loads are the two major sources of this degradation which are addressed in this paper. In order to reduce these dissipation significantly, we manipulate threshold voltage of circuits transistors by body biasing. To evaluate the efficiency of our method we select a common charge recovery logic called 2N- 2N2P and examine it on 8-bit Brent-Kung adder as well as 4-bit, 8-bit and 16-bit 2N-2N2P carry look-ahead adders. Experimental results show at least 50% reduction in the energy consumption as compared to traditional 2N-2N2P. Moreover, using our technique reduces the dynamic power variation by a factor of 7.8 on the 2N- 2N2P inverter and therefore improves DPA-resistance of charge recovery circuits significantly.
Keywords
VLSI; adders; integrated circuit design; logic design; 2N-2N2P carry look-ahead adders; Brent-Kung adder; DPA-immunity; body biasing method; charge recovery circuits; charge recovery logic; cryptographic VLSI circuits; differential power analysis attacks; energy consumption; energy dissipation; short circuit dissipation; Adders; Capacitance; Energy dissipation; Inverters; Logic gates; Power demand; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI (ISVLSI), 2010 IEEE Computer Society Annual Symposium on
Conference_Location
Lixouri, Kefalonia
Print_ISBN
978-1-4244-7321-2
Type
conf
DOI
10.1109/ISVLSI.2010.77
Filename
5572770
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